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MMUN2112LT1 Litlhaloso tsa Tech

TRANS PREBIAS PNP 246MW SOT23-3

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Fahafahana-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 246mW
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
hFE Min 60
Continuous Collector Current 100mA
RoHS Status Non-RoHS Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Published 2001
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Min Operating Temperature -55°C
HTS Code 8541.21.00.95
Voltage - Rated DC -50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 240
Current Rating -100mA
Base Part Number MMUN21**L
Qualification Status Not Qualified
Polarity PNP
Power Dissipation 246mW
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 22 k Ω
Lead Free Contains Lead
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Tse ling li kenyelletsa   "MMUN2"   likarolo

Likarolo tse latelang li kenyelletsa  'MMUN2' 

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