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MMUN2111LT3G Litlhaloso tsa Tech

TRANS PREBIAS PNP 246MW SOT23-3

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Fahafahana-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 246mW
Terminal Form GULL WING
Current Rating -100mA
Base Part Number MMUN21**L
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
hFE Min 35
Continuous Collector Current 100mA
Radiation Hardening No
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Voltage - Rated DC -50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Polarity PNP
Power Dissipation 246mW
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Max Breakdown Voltage 50V
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status ROHS3 Compliant
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Tse ling li kenyelletsa   "MMUN2"   likarolo

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