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IRF5803D2TRPBF Litlhaloso tsa Tech

MOSFET P-CH 40V 3.4A 8-SOIC

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Published 2001
Part Status Obsolete
Termination SMD/SMT
Subcategory Other Transistors
Number of Elements 1
Power Dissipation-Max 2W Ta
Power Dissipation 2W
FET Type P-Channel
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Rise Time 550ns
Vgs (Max) ±20V
Turn-Off Delay Time 88 ns
Threshold Voltage 3V
Drain to Source Breakdown Voltage -40V
FET Feature Schottky Diode (Isolated)
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Series FETKY™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 43 ns
Rds On (Max) @ Id, Vgs 112m Ω @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 3.4A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 40V
Nominal Vgs 3 V
Length 4.9784mm
Radiation Hardening No
RoHS Status RoHS Compliant
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