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IRF5801TRPBF Litlhaloso tsa Tech

IRF5801TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2002
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 2.2Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2 Ω @ 360mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 88pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 600mA
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 4.8A
Avalanche Energy Rating (Eas) 9.9 mJ
Height 990.6μm
Width 1.7mm
REACH SVHC No SVHC
Lead Free Contains Lead
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 200V
Terminal Position DUAL
Current Rating 600mA
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 600mA Ta
Rise Time 8ns
Vgs (Max) ±30V
Turn-Off Delay Time 8.8 ns
Threshold Voltage 5.5V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Nominal Vgs 5.5 V
Length 2.9972mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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