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UMD6NTR Litlhaloso tsa Tech

TRANS NPN/PNP PREBIAS 0.15W UMT6

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / BJT Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 6
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish TIN COPPER
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 6
Operating Supply Voltage 50V
Polarity NPN, PNP
Power Dissipation 150mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
hFE Min 100
VCEsat-Max 0.3 V
REACH SVHC No SVHC
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Active
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Terminal Form GULL WING
Current Rating 100mA
Base Part Number *MD6
Max Output Current 100mA
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 4.7k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
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