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MOSFET 2P-CH 30V 5A 8-SOIC

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Active
Number of Terminations 8
Terminal Finish TIN COPPER
Voltage - Rated DC -30V
Terminal Form GULL WING
Current Rating -5A
Base Part Number *J1
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 42m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 10V
Rise Time 30ns
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 5A
Drain Current-Max (Abs) (ID) 5A
Pulsed Drain Current-Max (IDM) 20A
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature 150°C TJ
Published 2003
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 80 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.042Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
Lead Free Lead Free
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