SH8K25GZ0TB Litlhaloso tsa Tech

4V DRIVE NCH+NCH MOSFET. A POWER

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 85m Ω @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 5V
Drain-source On Resistance-Max 0.085Ohm
DS Breakdown Voltage-Min 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Part Status Active
Number of Terminations 8
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 2W Ta
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 5.2A Ta
Drain to Source Voltage (Vdss) 40V
Pulsed Drain Current-Max (IDM) 8A
Avalanche Energy Rating (Eas) 0.48 mJ
FET Feature Standard
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