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DTA023JEBTL Litlhaloso tsa Tech

TRANS PREBIAS PNP 50V 0.15W SC89

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Fahafahana-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Weight 29.993795mg
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 3
Max Operating Temperature 150°C
Max Power Dissipation 150mW
Terminal Form FLAT
Output Voltage -70mV
Polarity PNP
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 150mV
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SC-89, SOT-490
Transistor Element Material SILICON
Published 2016
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Terminal Position DUAL
JESD-30 Code R-PDSO-F3
Number of Elements 1
Element Configuration Single
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Max Frequency 250MHz
Max Breakdown Voltage 50V
hFE Min 80
Continuous Collector Current -100mA
RoHS Status ROHS3 Compliant
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