SMUN5235T1G Litlhaloso tsa Tech

TRANS PREBIAS NPN 202MW SC70-3

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Fahafahana-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Max Power Dissipation 202mW
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Type NPN - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Resistor - Emitter Base (R2) 47 k Ω
Length 2.2mm
Radiation Hardening No
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 hour ago)
Package / Case SC-70, SOT-323
Number of Pins 3
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Base Part Number MUN52**T
Reference Standard AEC-Q101
Polarity NPN
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Saturation Voltage 250mV
Resistor - Base (R1) 2.2 k Ω
Height 900μm
Width 1.35mm
RoHS Status ROHS3 Compliant
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