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NVTFS4C10NTAG Litlhaloso tsa Tech

MOSFET NFET U8FL 30V 44A 7.4MOHM

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 993pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 19.3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 47A
Drain Current-Max (Abs) (ID) 15.3A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 26 mJ
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case 8-PowerWDFN
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 8
JESD-30 Code S-PDSO-F5
Power Dissipation-Max 3W Ta 28W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
Rds On (Max) @ Id, Vgs 7.4m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 15.3A Ta 47A Tc
Rise Time 25ns
Vgs (Max) ±20V
Turn-Off Delay Time 18 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0074Ohm
Pulsed Drain Current-Max (IDM) 196A
Radiation Hardening No
Lead Free Lead Free
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