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NVMFS4C01NWFT1G Litlhaloso tsa Tech

MOSFET N-CH 30V 49A SO8FL

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Subcategory FET General Purpose Power
Terminal Position DUAL
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 49A Ta 319A Tc
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.00095Ohm
DS Breakdown Voltage-Min 30V
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 3.84W Ta 161W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 0.9m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10144pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 319A
Pulsed Drain Current-Max (IDM) 900A
RoHS Status ROHS3 Compliant
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