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NVD5802NT4G Litlhaloso tsa Tech

MOSFET N-CH 40V 16.4A DPAK

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 27 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Turn-Off Delay Time 39 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0078Ohm
Avalanche Energy Rating (Eas) 240 mJ
Length 6.22mm
Radiation Hardening No
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.5W Ta 93.75W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 16.4A Ta 101A Tc
Rise Time 52ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 8.5 ns
Continuous Drain Current (ID) 101A
Drain Current-Max (Abs) (ID) 16.4A
DS Breakdown Voltage-Min 40V
Height 2.38mm
Width 6.73mm
RoHS Status ROHS3 Compliant
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