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NTJS4405NT1G Litlhaloso tsa Tech

MOSFET N-CH 25V 1A SOT-363

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 630mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 350m Ω @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Fall Time (Typ) 4.7 ns
Continuous Drain Current (ID) 1.2A
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 25V
Length 2.2mm
Radiation Hardening No
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 1.2A
Pin Count 6
Power Dissipation-Max 630mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1A Ta
Rise Time 4.7ns
Vgs (Max) ±8V
Turn-Off Delay Time 25 ns
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.35Ohm
Height 1mm
Width 1.35mm
RoHS Status ROHS3 Compliant
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