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NTHS5443T1G Litlhaloso tsa Tech

MOSFET P-CH 20V 3.6A CHIPFET

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mount Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
Current Rating -3.6A
Pin Count 8
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 600mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Turn-Off Delay Time 38 ns
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Length 3.1mm
Radiation Hardening No
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 1.3W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 4.9A
Drain-source On Resistance-Max 0.065Ohm
Height 1.1mm
Width 1.7mm
RoHS Status ROHS3 Compliant
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