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NSVMMBT5551M3T5G Litlhaloso tsa Tech

NSVMMBT5551M3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Enkel BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case SOT-723
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Max Power Dissipation 265mW
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power - Max 265mW
Transistor Type NPN
Max Collector Current 60mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 160V
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PDSO-F3
Configuration SINGLE
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 200mV
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
RoHS Status ROHS3 Compliant
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