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NSVDTC123JM3T5G Litlhaloso tsa Tech

SOT-723 BIAS RESISTOR

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Fahafahana-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Current - Collector Cutoff (Max) 500nA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 k Ω
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case SOT-723
Transistor Element Material SILICON
Published 2009
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power - Max 260mW
Polarity/Channel Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector (Ic) (Max) 100mA
Resistor - Emitter Base (R2) 47 k Ω
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