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NSVBC144EPDXV6T1G Litlhaloso tsa Tech

TRANS PREBIAS NPN/PNP 50V SOT563

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature (Max) 150°C
Number of Elements 2
Power - Max 500mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector Cutoff (Max) 500nA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47k Ω
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Published 2012
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Operating Temperature (Min) -55°C
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Polarity/Channel Type NPN AND PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Current - Collector (Ic) (Max) 100mA
Resistor - Emitter Base (R2) 47k Ω
Lead Free Lead Free
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