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NSBC114EPDXV6T1G Litlhaloso tsa Tech

TRANS PREBIAS NPN/PNP SOT563

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Surface Mount YES
Weight 8.193012mg
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Terminal Form FLAT
Current Rating 100mA
Base Part Number NSBC1*
Number of Elements 2
Element Configuration Dual
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 35
Continuous Collector Current 100mA
Height 550μm
Width 1.2mm
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case SOT-563, SOT-666
Number of Pins 6
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Polarity NPN, PNP
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Saturation Voltage 250mV
Emitter Base Voltage (VEBO) 6V
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
Length 1.6mm
Radiation Hardening No
Lead Free Lead Free
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Tse ling li kenyelletsa   "NSBC1"   likarolo

Likarolo tse latelang li kenyelletsa  'NSBC1' 

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