- Lihlahisoa tsohle
- Diskret Semikonduktor
- BJT Transistors Arrays
-
NSBA123JDXV6T1G
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NSBA123JDXV6T1G Litlhaloso tsa Tech
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
---|---|
Category | Diskret Semikonduktor / BJT Transistors Arrays |
Manufacturer | ON Semiconductor |
Factory Lead Time | 3 Weeks |
Mount | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 0.047 |
Voltage - Rated DC | -50V |
Terminal Form | FLAT |
Current Rating | -100mA |
Base Part Number | NSBA1* |
Qualification Status | Not Qualified |
Polarity | PNP |
Power Dissipation | 357mW |
Collector Emitter Voltage (VCEO) | 250mV |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
Max Breakdown Voltage | 50V |
Resistor - Base (R1) | 2.2k Ω |
Resistor - Emitter Base (R2) | 47k Ω |
Lead Free | Lead Free |
Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mounting Type | Surface Mount |
Number of Pins | 6 |
Published | 2007 |
Part Status | Obsolete |
Number of Terminations | 6 |
Terminal Finish | Tin (Sn) |
Min Operating Temperature | -55°C |
Subcategory | BIP General Purpose Small Signal |
Max Power Dissipation | 500mW |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
[email protected] Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 6 |
Number of Elements | 2 |
Element Configuration | Dual |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Max Collector Current | 100mA |
Current - Collector Cutoff (Max) | 500nA |
Collector Emitter Breakdown Voltage | 50V |
hFE Min | 80 |
Continuous Collector Current | -100mA |
RoHS Status | RoHS Compliant |
NSBA123JDXV6T1G Litokomane
Khoasolla li-database le litokomane tsa moetsi bakeng sa NSBA123JDXV6T1G
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Li-datasheets
Tse ling li kenyelletsa "NSBA1" likarolo
Likarolo tse latelang li kenyelletsa 'NSBA1'
Karolo # | Moetsi | Sehlopha | Ho fumaneha |
---|---|---|---|
NSBA113EDXV6T1 | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2561 |
NSBA113EDXV6T1 | ON Semiconductor | BJT Transistors Arrays | |
NSBA113EDXV6T1 | Rochester Electronics, LLC | BJT Transistors Arrays | |
NSBA113EDXV6T1G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2743 |
NSBA113EDXV6T1G | ON Semiconductor | BJT Transistors Arrays | |
NSBA113EF3T5G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2635 |
NSBA113EF3T5G | ON Semiconductor | Fahafahana-Biased BJT Transistors | |
NSBA114EDP6T5G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 6222 |
NSBA114EDP6T5G | ON Semiconductor | BJT Transistors Arrays | |
NSBA114EDXV6T1 | ON | Spécialisé Chaud ICs | 5048 |
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NSBA123JDXV6T1G baetsi ba lihlahisoa: ON Semiconductor, Bonchip setokong, NSBA123JDXV6T1G theko ea litšupiso. NSBA123JDXV6T1G mekhahlelo, NSBA123JDXV6T1G Datasheet PDF le pin diagram tlhaloso download.U ka sebelisa the NSBA123JDXV6T1G Li-plugable Connectors, DSP Datesheet PDF, fumana NSBA123JDXV6T1G Setšoantšo sa pin le setšoantšo sa potoloho le mokhoa oa ts'ebeliso ea ts'ebetso, NSBA123JDXV6T1G lisebelisoa tsa elektronike.U ka khoasolla ho tloha ho Bonchip.
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Aterese : D1 6th floor,Lehui Center,Jihua Road 489 Longgang District, Shenzhen-518129, China
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