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MUN5111T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at Bonchip

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Category Diskret Semikonduktor / Fahafahana-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Contact Plating Tin
Package / Case SC-70, SOT-323
Number of Pins 3
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 202mW
Terminal Form GULL WING
Current Rating -100mA
Base Part Number MUN51**T
Max Output Current 100mA
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Length 2.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC -50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Operating Supply Voltage 50V
Polarity PNP
Power Dissipation 202mW
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Saturation Voltage 250mV
hFE Min 35
Continuous Collector Current 100mA
Height 900μm
Width 1.35mm
REACH SVHC No SVHC
Lead Free Lead Free
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Likarolo tse latelang li kenyelletsa  'MUN51' 

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