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MMBTA64LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Enkel BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 1998
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Polarity PNP
Power Dissipation 225mW
Transistor Type PNP - Darlington
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1.5V
Frequency - Transition 125MHz
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current -500mA
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Form GULL WING
Current Rating -500mA
Base Part Number MMBTA64
Number of Elements 1
Element Configuration Single
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Transition Frequency 125MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
hFE Min 10000
Height 1.01mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
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