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MMBTA13LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Enkel BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Form GULL WING
Current Rating 300mA
Base Part Number MMBTA13
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Max Collector Current 300mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1.5V
Frequency - Transition 125MHz
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 300mA
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Surface Mount YES
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Published 1997
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Polarity NPN
Power Dissipation 225mW
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Transition Frequency 125MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
hFE Min 5000
Height 940μm
Width 1.3mm
REACH SVHC No SVHC
Lead Free Lead Free
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