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MJB42CT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Enkel BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC -100V
Terminal Form GULL WING
Current Rating -6A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 3MHz
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Transition Frequency 3MHz
Max Breakdown Voltage 100V
Emitter Base Voltage (VEBO) 5V
Height 4.83mm
Width 11.05mm
REACH SVHC No SVHC
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 65W
Peak Reflow Temperature (Cel) 260
Frequency 3MHz
Base Part Number MJB42
JESD-30 Code R-PSSO-G2
Polarity PNP, NPN
Power Dissipation 2W
Transistor Application SWITCHING
Transistor Type PNP
Max Collector Current 6A
Current - Collector Cutoff (Max) 700μA
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 100V
hFE Min 30
Length 10.29mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MJB42C AMI Semiconductor / ON Semiconductor Spécialisé Chaud ICs 19
MJB42CT4G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Single 1256

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