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FQP8N80C Litlhaloso tsa Tech

FQP8N80C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 800V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 178W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.55 Ω @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 8A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 8A
Avalanche Energy Rating (Eas) 850 mJ
Length 10.1mm
REACH SVHC No SVHC
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 hours ago)
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 8A
Qualification Status Not Qualified
Power Dissipation-Max 178W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 40 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8A Tc
Rise Time 110ns
Vgs (Max) ±30V
Turn-Off Delay Time 65 ns
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Height 9.4mm
Width 4.7mm
RoHS Status ROHS3 Compliant
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FQP8N80 Fairchild/ON Semiconductor Spécialisé Chaud ICs 70

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