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FQB34P10TM-F085 Litlhaloso tsa Tech

MOSFET P-CH 100V 33.5A D2PAK

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Other Transistors
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 3.75W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 33.5A Tc
Rise Time 250ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 210 ns
Continuous Drain Current (ID) 33.5A
Drain-source On Resistance-Max 0.06Ohm
Avalanche Energy Rating (Eas) 2200 mJ
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.75W Ta 155W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 16.75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±25V
Turn-Off Delay Time 160 ns
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -100V
Radiation Hardening No
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