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FGD3N60UNDF Litlhaloso tsa Tech

FGD3N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Enkel IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 60W
Base Part Number FGD3N60
Number of Elements 1
Power Dissipation 60W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 6A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 400V, 3A, 10 Ω, 15V
Turn Off Time-Nom (toff) 146 ns
Gate Charge 1.6nC
Td (on/off) @ 25°C 5.5ns/22ns
Gate-Emitter Voltage-Max 20V
Height 2.3mm
Width 6.1mm
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Cut Tape (CT)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 21ns
Collector Emitter Saturation Voltage 2.4V
Turn On Time 7.4 ns
Vce(on) (Max) @ Vge, Ic 2.52V @ 15V, 3A
IGBT Type NPT
Current - Collector Pulsed (Icm) 9A
Switching Energy 52μJ (on), 30μJ (off)
Gate-Emitter Thr Voltage-Max 8.5V
Length 6.6mm
Radiation Hardening No
Lead Free Lead Free
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