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FDP5N60NZ Litlhaloso tsa Tech

MOSFET N-CH 600V 4.5A TO-220-3

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 2.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Length 10.67mm
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series UniFET-II™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Rise Time 20ns
Vgs (Max) ±25V
Turn-Off Delay Time 35 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 2Ohm
Height 16.3mm
Width 4.7mm
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