FDP26N40 Litlhaloso tsa Tech

FDP26N40 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series UniFET™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 265W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 45 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 26A Tc
Rise Time 100ns
Vgs (Max) ±30V
Turn-Off Delay Time 115 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 400V
Length 10.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 160MOhm
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 265W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 160m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3185pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 66 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 30V
Height 15.38mm
Width 4.7mm
REACH SVHC No SVHC
Lead Free Lead Free
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Tse ling li kenyelletsa   "FDP26"   likarolo

Likarolo tse latelang li kenyelletsa  'FDP26' 

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FDP26N40 IC AMI Semiconductor / ON Semiconductor Spécialisé Chaud ICs 26423

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