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FDMS86252 Litlhaloso tsa Tech

FDMS86252 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 74mg
Operating Temperature -55°C~150°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
JESD-30 Code R-PDSO-F5
Power Dissipation-Max 2.5W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 51m Ω @ 4.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 905pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 3.2 ns
Continuous Drain Current (ID) 16A
JEDEC-95 Code MO-240AA
Drain Current-Max (Abs) (ID) 4.6A
Pulsed Drain Current-Max (IDM) 20A
Height 1.05mm
Width 6mm
REACH SVHC No SVHC
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Element Configuration Single
Power Dissipation 69W
Turn On Delay Time 7.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.6A Ta 16A Tc
Rise Time 2.3ns
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 50 mJ
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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