FDMC8030 Litlhaloso tsa Tech

FDMC8030 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Surface Mount
Package / Case 8-PowerWDFN
Weight 196mg
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e4
Part Status Active
Number of Terminations 8
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Max Power Dissipation 800mW
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 10m Ω @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 20V
Rise Time 3ns
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 12V
Pulsed Drain Current-Max (IDM) 50A
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 30 pF
Length 3mm
Radiation Hardening No
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 hours ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Number of Elements 1
Element Configuration Dual
Power Dissipation 1.9W
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.8V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 40V
Turn-Off Delay Time 19 ns
Threshold Voltage 1.5V
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 800μm
Width 3mm
RoHS Status ROHS3 Compliant
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Tse ling li kenyelletsa   "FDMC8"   likarolo

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