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FDFMA2N028Z Litlhaloso tsa Tech

MOSFET 20V N-Ch PT MFET SCHOTTKY

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Surface Mount
Package / Case 6-VDFN Exposed Pad
Weight 60mg
Operating Temperature -55°C~150°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC 20V
Terminal Position DUAL
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Rise Time 8ns
Vgs (Max) ±12V
Turn-Off Delay Time 14 ns
Threshold Voltage 1V
Drain to Source Breakdown Voltage 20V
Feedback Cap-Max (Crss) 90 pF
Length 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Active
Number of Terminations 6
Resistance 68MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 3.7A
Power Dissipation-Max 1.4W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 68m Ω @ 3.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 3.7A
Gate to Source Voltage (Vgs) 12V
FET Feature Schottky Diode (Isolated)
Height 750μm
Width 2mm
REACH SVHC No SVHC
Lead Free Lead Free
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