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ATP101-TL-H Litlhaloso tsa Tech

MOSFET P-CH 30V 25A ATPAK

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
Number of Terminations 2
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Turn On Delay Time 9.2 ns
Transistor Application SWITCHING
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 25A Ta
Rise Time 70ns
Vgs (Max) ±20V
Turn-Off Delay Time 80 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 75A
Height 1.5mm
Width 7.3mm
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Package / Case ATPAK (2 leads+tab)
Number of Pins 3
Operating Temperature 150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 875pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 25A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 25 mJ
Length 6.5mm
RoHS Status ROHS3 Compliant
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Tse ling li kenyelletsa   "ATP10"   likarolo

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