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VN10KN3-G Litlhaloso tsa Tech

Trans MOSFET N-CH 60V 0.31A 3-Pin TO-92

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Channels 1
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 310mA Tj
Vgs (Max) ±30V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 60V
Height 5.33mm
Width 4.19mm
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 219.992299mg
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Continuous Drain Current (ID) 310mA
Drain-source On Resistance-Max 5Ohm
Feedback Cap-Max (Crss) 5 pF
Length 5.21mm
Radiation Hardening No
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