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SPD04N80C3BTMA1 Litlhaloso tsa Tech

Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) TO-252

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Discontinued
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3 Ω @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Power Dissipation-Max 63W Tc
Power Dissipation 63W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 240μA
Current - Continuous Drain (Id) @ 25°C 4A Tc
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
JEDEC-95 Code TO-252AA
Max Dual Supply Voltage 800V
Radiation Hardening No
Lead Free Lead Free
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