IRLZ44NSTRLPBF Litlhaloso tsa Tech

IRLZ44NSTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

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Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1997
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 55V
Terminal Form GULL WING
Current Rating 47A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 47A
Gate to Source Voltage (Vgs) 16V
Dual Supply Voltage 55V
Nominal Vgs 2 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Resistance 22mOhm
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 47A Tc
Rise Time 84ns
Vgs (Max) ±16V
Turn-Off Delay Time 26 ns
Threshold Voltage 2V
Drain to Source Breakdown Voltage 55V
Recovery Time 120 ns
Height 4.826mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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