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IRLL014NTRPBF Litlhaloso tsa Tech

IRLL014NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 4
Resistance 200mOhm
Voltage - Rated DC 55V
Terminal Position DUAL
Current Rating 2A
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 5.1 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2A Ta
Rise Time 4.9ns
Vgs (Max) ±16V
Turn-Off Delay Time 14 ns
Threshold Voltage 2V
Drain Current-Max (Abs) (ID) 2A
Dual Supply Voltage 55V
Nominal Vgs 2 V
Length 6.6802mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 1999
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PDSO-G4
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 2.9 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Recovery Time 61 ns
Height 1.4478mm
Width 3.7mm
REACH SVHC No SVHC
Lead Free Lead Free
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