IRGP50B60PD1-EP Litlhaloso tsa Tech

IGBT 600V 75A 390W TO247AD

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Enkel IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Package / Case TO-3P-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Reach Compliance Code compliant
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 390W
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AD
Current - Collector (Ic) (Max) 75A
Turn On Time 39 ns
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 50A
IGBT Type NPT
Current - Collector Pulsed (Icm) 150A
Switching Energy 255μJ (on), 375μJ (off)
Gate-Emitter Thr Voltage-Max 5V
RoHS Status RoHS Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2008
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Rise Time-Max 20ns
Input Type Standard
Transistor Application POWER CONTROL
Reverse Recovery Time 42ns
Voltage - Collector Emitter Breakdown (Max) 600V
Power Dissipation-Max (Abs) 390W
Test Condition 390V, 33A, 3.3 Ω, 15V
Turn Off Time-Nom (toff) 161 ns
Gate Charge 205nC
Td (on/off) @ 25°C 30ns/130ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 20ns
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Likarolo tse latelang li kenyelletsa  'IRGP5' 

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