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IRG4RC10KD Litlhaloso tsa Tech

IRG4RC10KD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Enkel IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2001
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Transistor Application MOTOR CONTROL
Reverse Recovery Time 28ns
Voltage - Collector Emitter Breakdown (Max) 600V
Power Dissipation-Max (Abs) 38W
Test Condition 480V, 5A, 100 Ω, 15V
Turn Off Time-Nom (toff) 410 ns
Current - Collector Pulsed (Icm) 18A
Switching Energy 250μJ (on), 140μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status Non-RoHS Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Number of Elements 1
Case Connection COLLECTOR
Power - Max 38W
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252AA
Current - Collector (Ic) (Max) 9A
Turn On Time 78 ns
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Gate Charge 19nC
Td (on/off) @ 25°C 49ns/97ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 210ns
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