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IRG4BC10KDPBF Litlhaloso tsa Tech

IRG4BC10KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Enkel IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 9A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 46 ns
Rise Time 32ns
Turn-Off Delay Time 100 ns
Max Collector Current 9A
Collector Emitter Breakdown Voltage 600V
Turn On Time 78 ns
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Gate Charge 19nC
Td (on/off) @ 25°C 49ns/97ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 210ns
Length 10.5156mm
Radiation Hardening No
RoHS Status RoHS Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 38W
Number of Elements 1
Power Dissipation 38W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.62V
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.39V
Test Condition 480V, 5A, 100 Ω, 15V
Turn Off Time-Nom (toff) 410 ns
Current - Collector Pulsed (Icm) 18A
Switching Energy 250μJ (on), 140μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 8.77mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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Tse ling li kenyelletsa   "IRG4B"   likarolo

Likarolo tse latelang li kenyelletsa  'IRG4B' 

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