IRFIB41N15DPBF Litlhaloso tsa Tech

IRFIB41N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

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Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Voltage - Rated DC 150V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 41A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.045Ohm
Dual Supply Voltage 150V
Nominal Vgs 5.5 V
Length 10.6172mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 41A
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 41A Tc
Rise Time 63ns
Vgs (Max) ±20V
Turn-Off Delay Time 25 ns
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 470 mJ
Height 16.12mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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