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IRFHM830TRPBF Litlhaloso tsa Tech

MOSFET N-CH 30V 21A PQFN

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code S-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 9.2 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Height 1mm
Width 3.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-VQFN Exposed Pad
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 5
Resistance 6MOhm
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.7W Ta 37W Tc
Power Dissipation 2.7W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 50μA
Current - Continuous Drain (Id) @ 25°C 21A Ta 40A Tc
Rise Time 25ns
Vgs (Max) ±20V
Turn-Off Delay Time 13 ns
Threshold Voltage 1.8V
Drain Current-Max (Abs) (ID) 40A
Nominal Vgs 1.8 V
Length 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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