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IRF8736PBF Litlhaloso tsa Tech

IRF8736PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8m Ω @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2315pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 7.5 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Nominal Vgs 1.8 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 4.8MOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 50μA
Current - Continuous Drain (Id) @ 25°C 18A Ta
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 13 ns
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 30V
Recovery Time 24 ns
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Lead Free
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