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IPL60R065P7AUMA1 Litlhaloso tsa Tech

MOSFET N-CH 4VSON

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 4-PowerTSFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ P7
Part Status Active
Number of Terminations 4
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 15.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2895pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 73 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Height 1.1mm
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -40°C~150°C TJ
Published 2014
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
JESD-30 Code S-PSSO-N4
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 201W Tc
Power Dissipation 201W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 800μA
Current - Continuous Drain (Id) @ 25°C 41A Tc
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Continuous Drain Current (ID) 41A
Drain-source On Resistance-Max 0.065Ohm
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
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