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IPD60R450E6ATMA1 Litlhaloso tsa Tech

MOSFET N-CH 650V 9.2A

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ E6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 280μA
Current - Continuous Drain (Id) @ 25°C 9.2A Tc
Rise Time 9ns
Vgs (Max) ±20V
Turn-Off Delay Time 70 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.45Ohm
Pulsed Drain Current-Max (IDM) 26A
RoHS Status RoHS Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Published 2015
Part Status Obsolete
Number of Terminations 2
Terminal Position SINGLE
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 74W Tc
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 450m Ω @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 9.2A
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Radiation Hardening No
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