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IPD30N06S2-15 Litlhaloso tsa Tech

MOSFET N-CH 55V 30A TO252-3

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Part Status Discontinued
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 136W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 14.7m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1485pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 30A
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 240 mJ
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 80μA
Current - Continuous Drain (Id) @ 25°C 30A Tc
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0147Ohm
DS Breakdown Voltage-Min 55V
RoHS Status ROHS3 Compliant
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