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IPB033N10N5LFATMA1 Litlhaloso tsa Tech

IPB033N10N5LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™-5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 179W Tc
Power Dissipation 179W
Turn On Delay Time 8 ns
Rds On (Max) @ Id, Vgs 3.3m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 480A
Height 4.5mm
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4.1V @ 150μA
Current - Continuous Drain (Id) @ 25°C 120A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 64 ns
Threshold Voltage 3.3V
Drain Current-Max (Abs) (ID) 23A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 273 mJ
RoHS Status ROHS3 Compliant
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