IPA60R280P6XKSA1 Litlhaloso tsa Tech

MOSFET N-CH 600V TO220FP-3

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Number of Pins 3
Weight 6.000006g
Packaging Tube
Series CoolMOS™ P6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Number of Elements 1
Power Dissipation-Max 32W Tc
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 280mOhm @ 5.2A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 13.8A Tc
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 13.8A
Max Dual Supply Voltage 600V
Drain to Source Resistance 252mOhm
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package PG-TO220-FP
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Active
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation 32W
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 430μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 25.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Turn-Off Delay Time 36 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.19nF
Rds On Max 280 mΩ
Lead Free Lead Free
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