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AUIRG4BC30S-S Litlhaloso tsa Tech

IGBT 600V 34A 100W D2PAK

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Enkel IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1.6V
Collector Emitter Breakdown Voltage 600V
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 18A
Gate Charge 50nC
Td (on/off) @ 25°C 22ns/540ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 590ns
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2010
Part Status Obsolete
Number of Terminations 2
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation 100W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 34A
Collector Emitter Saturation Voltage 1.6V
Test Condition 480V, 18A, 23 Ω, 15V
Turn Off Time-Nom (toff) 1550 ns
Current - Collector Pulsed (Icm) 68A
Switching Energy 260μJ (on), 3.45mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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