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AUIRF7805Q Litlhaloso tsa Tech

MOSFET N CH 30V 13A 8-SO

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semikonduktor / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
JEDEC-95 Code MS-012AA
Drain-source On Resistance-Max 0.011Ohm
DS Breakdown Voltage-Min 30V
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 8
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G8
Number of Elements 1
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 13A
Pulsed Drain Current-Max (IDM) 100A
RoHS Status RoHS Compliant
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