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SI3475DV-T1-GE3 Litlhaloso tsa Tech

MOSFET P-CH 200V 0.95A 6-TSOP

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Category Diskret Semiconductor Produkte / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 2W (Ta), 3.2W (Tc)
Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 50V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Detailed Description P-Channel 200V 950mA (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 6-TSOP
Rds On (Max) @ Id, Vgs 1.61 Ohm @ 900mA, 10V
Packaging Cut Tape (CT)
Other Names SI3475DV-T1-GE3CT
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 950mA (Tc)
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Tse ling li kenyelletsa   "SI347"   likarolo

Likarolo tse latelang li kenyelletsa  'SI347' 

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SI3473CDV-T1-GE3 Vishay / Siliconix Transistors - FETs, MOSFETs - Single 33440
SI3473CDV-T1-GE3 Vishay Siliconix Single MOSFETs Transistors
Si3473CDV-T1-GE3 MOS Vishay Precision Group Spécialisé Chaud ICs 3223
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SI3473DV-T1 IC Vishay Precision Group Spécialisé Chaud ICs 650

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SI3475DV-T1-GE3 baetsi ba lihlahisoa: Electro-Films (EFI) / Vishay, Bonchip setokong, SI3475DV-T1-GE3 theko ea litšupiso. SI3475DV-T1-GE3 mekhahlelo, SI3475DV-T1-GE3 Datasheet PDF le pin diagram tlhaloso download.U ka sebelisa the SI3475DV-T1-GE3 Li-plugable Connectors, DSP Datesheet PDF, fumana SI3475DV-T1-GE3 Setšoantšo sa pin le setšoantšo sa potoloho le mokhoa oa ts'ebeliso ea ts'ebetso, SI3475DV-T1-GE3 lisebelisoa tsa elektronike.U ka khoasolla ho tloha ho Bonchip.
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